Items where Author is "Krier, A."

Al-Saymari, F.A. and Craig, A.P. and Lu, Q. and Hanks, L.A. and Marshall, A.R.J. and Krier, A. (2023) Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm. Applied Physics Letters, 123 (20): 201103. ISSN 0003-6951

Di Paola, D.M. and Lu, Q. and Repiso, E. and Kesaria, M. and Makarovsky, O. and Krier, A. and Patanè, A. (2020) Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters, 116 (14): 142108. ISSN 0003-6951

Lu, Q. and Zhou, Y. and Chen, J. and He, L. and Krier, A. and (SPIE), The Society of Photo-Optical Instrumentation Engineers (2020) Mid-infrared interband cascade light-emitting diodes with InAs/GaAßb superlattices on InAs substrates : Smart Photonic and Optoelectronic Integrated Circuits XXII 2020. In: Smart Photonic and Optoelectronic Integrated Circuits XXII, 2020-02-01 - 2020-02-06.

Al-Saymari, F.A. and Craig, A.P. and Noori, Y.J. and Lu, Q. and Marshall, A.R.J. and Krier, A. (2019) Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection. Applied Physics Letters, 114 (17): 171103. ISSN 0003-6951

Craig, A.P. and Al-Saymari, F. and Jain, M. and Bainbridge, A. and Savich, G.R. and Golding, T. and Krier, A. and Wicks, G.W. and Marshall, A.R. (2019) Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared. Applied Physics Letters, 114 (15): 151107. ISSN 0003-6951

Tournet, J. and Parola, S. and Vauthelin, A. and Montesdeoca Cardenes, D. and Soresi, S. and Martinez, F. and Lu, Q. and Cuminal, Y. and Carrington, P.J. and Décobert, J. and Krier, A. and Rouillard, Y. and Tournié, E. (2019) GaSb-based solar cells for multi-junction integration on Si substrates. Solar Energy Materials and Solar Cells, 191. pp. 444-450. ISSN 0927-0248

Carrington, P. J. and Delli, E. and Hodgson, P. D. and Repiso, E. and Craig, A. and Marshall, A. and Krier, A. (2017) Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. In: 30th Annual Conference of the IEEE Photonics Society, IPC 2017 :. Institute of Electrical and Electronics Engineers Inc., USA, pp. 307-308. ISBN 9781509065783

Qiu, Feng and Qiu, Weiyang and Li, Yulian and Wang, Xingjun and Zhang, Yun and Zhou, Xiaohao and Lv, Yingfei and Sun, Yan and Deng, Huiyong and Hu, Shuhong and Dai, Ning and Wang, Chong and Yang, Yu and Zhuang, Qiandong and Hayne, Manus and Krier, A. (2016) An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. Nanotechnology, 27 (6): 065602. ISSN 0957-4484

Velichko, A. V. and Patane, A. and Capizzi, M. and Sandall, I. C. and Giubertoni, D. and Makarovsky, O. and Polimeni, A. and Krier, A. and Zhuang, Q. and Tan, C. H. (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106 (2): 022111. ISSN 0003-6951

Young, M. P. and Woodhead, C. S. and Roberts, Jonny and Noori, Y. J. and Noble, M. T. and Krier, A. and Smakman, E. P. and Koenraad, P. M. and Hayne, M. and Young, R. J. (2014) Photoluminescence studies of individual and few GaSb/GaAs quantum rings. AIP Advances, 4 (11): 117127.

Wagener, M. C. and Carrington, P. J. and Botha, J. R. and Krier, A. (2014) Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings. Journal of Applied Physics, 116 (4): 044304. ISSN 0021-8979

Hodgson, P. D. and Young, R. J. and Kamarudin, M. Ahmad and Carrington, P. J. and Krier, A. and Zhuang, Q. D. and Smakman, E. P. and Koenraad, P. M. and Hayne, M. (2013) Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures. Journal of Applied Physics, 114 (7): 073519. ISSN 0021-8979

Carrington, P. J. and Wagener, M. C. and Botha, J. R. and Sanchez, A. M. and Krier, A. (2012) Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. Applied Physics Letters, 101 (23): 231101. ISSN 0003-6951

Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9): 094009. ISSN 0268-1242

Das, S. K. and Das, T. D. and Dhar, S. and de la Mare, M. and Krier, A. (2012) Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared Physics and Technology, 55 (1). pp. 156-160. ISSN 1350-4495

Cheetham, K. J. and Carrington, P. J. and Krier, A. and Patel, I. I. and Martin, F. L. (2012) Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb. Semiconductor Science and Technology, 27 (1): 015004. -. ISSN 0268-1242

Cheetham, K. J. and Krier, A. and Marko, I. P. and Aldukhayel, A. and Sweeney, S. J. (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. Applied Physics Letters, 99 (14): 141110. -. ISSN 0003-6951

de la Mare, M. and Das, S. C. and Das, T. D. and Dhar, S. and Krier, A. (2011) N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy. Journal of Physics D: Applied Physics, 44 (31): 315102. -. ISSN 0022-3727

Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118

Cheetham, K. J. and Krier, A. and Patel, I. I. and Martin, F. L. and Tzeng, J-S and Wu, C-J and Lin, H-H (2011) Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. Journal of Physics D: Applied Physics, 44 (8). 085405. ISSN 0022-3727

Cheetham, K. J. and Carrington, P. J. and Cook, N. B. and Krier, A. (2011) Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. Solar Energy Materials and Solar Cells, 95 (2). pp. 534-537. ISSN 0927-0248

Ibanez, J. and Oliva, R. and de la Mare, M. and Schmidbauer, M. and Hernandez, S. and Pellegrino, P. and Scurr, D. J. and Cusco, R. and Artus, L. and Shafi, M. and Mari, R. H. and Henini, M. and Zhuang, Q. and Godenir, A. M. R. and Krier, A. (2010) Structural and optical properties of dilute InAsN grown by molecular beam epitaxy. Journal of Applied Physics, 108 (10). p. 103504. ISSN 1089-7550

de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43 (34). p. 345103. ISSN 0022-3727

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, CLEO 2009 :. UNSPECIFIED, USA. ISBN 9781557528698

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 :. UNSPECIFIED, USA. ISBN 9781557528698

de la Mare, M. and Zhuang, Q. and Krier, A. and Patane, A. and Dhar, S. (2009) Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95 (3). 031110. ISSN 1077-3118

Cook, N. B. and Krier, A. (2009) Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Applied Physics Letters, 95 (2). 021110. ISSN 1077-3118

Carrington, P. J. and Zhuang, Q. and Yin, M. and Krier, A. (2009) Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology, 24 (7). 075001. ISSN 0268-1242

Kudrawiec, R. and Misiewicz, J. and Zhuang, Q. and Godenir, A. M. R. and Krier, A. (2009) Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys. Applied Physics Letters, 94 (15). p. 151902. ISSN 1077-3118

Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, 94 (9). 091111. ISSN 1077-3118

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Vanov, S. V. and Krier, A. (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40 (3). pp. 469-472. ISSN 0026-2692

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: International Quantum Electronics Conference, IQEC 2009 :. Optical Society of America (OSA), USA. ISBN 9781557528698

Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on :. IEEE, Baltimore, pp. 2813-2814. ISBN 978-1-4244-5184-5

Patane, A. and Allison, G. and Eaves, L. and Kozlova, N. V. and Zhuang, Q. D. and Krier, A. and Hopkinson, M. and Hill, G. (2008) Electron coherence length and mobility in highly mismatched III-N-V alloys. Applied Physics Letters, 93 (25). p. 252106. ISSN 1077-3118

Zhuang, Q. and Carrington, P. J. and Krier, A. (2008) Growth optimization of self-organized InSb/InAs quantum dots. Journal of Physics D: Applied Physics, 41 (23): 232003. ISSN 0022-3727

Cripps, S. A. and Hosea, T. J. C. and Krier, A. and Smirnov, V. and Batty, P. J. and Zhuang, Q. D. and Lin, H. H. and Liu, P. W. and Tsai, G. (2008) Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance. Thin Solid Films, 516 (22). pp. 8049-8058. ISSN 0040-6090

Yin, M. and Nash, G. R. and Coomber, S. D. and Buckle, L. and Carrington, P. J. and Krier, A. and Andreev, A. and Przeslak, S. J. B. and de Valicourt, G. and Smith, S. J. and Emeny, M. T. and Ashley, T. (2008) GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters, 93 (12). p. 121106. ISSN 1077-3118

Zhuang, Q. and Godenir, A. and Krier, A. and Tsai, G. and Lin, H. H. (2008) Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. Applied Physics Letters, 93 (12). p. 121903. ISSN 1077-3118

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118

Dhar, S. and Das, T. D. and de la Mare, M. and Krier, A. (2008) Properties of dilute InAsN layers grown by liquid phase epitaxy. Applied Physics Letters, 93 (7). 071905. ISSN 1077-3118

Zhuang, Q. and Godenir, A. and Krier, A. (2008) Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. Journal of Physics D: Applied Physics, 41 (13). p. 132002. ISSN 0022-3727

Zhuang, Q. and Godenir, A. M. R. and Krier, A. and Lai, K. T. and Haywood, S. K. (2008) Room temperature photoluminescence at 4.5 mu m from InAsN. Journal of Applied Physics, 103 (6). 063520. ISSN 1089-7550

Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900: 69000I. ISSN 0277-786X

Krier, A. and Yin, M. and Smirnov, V. and Batty, Peter James and Carrington, Peter and Solovev, V. and Sherstnev, V. (2008) The development of room temperature LEDs and lasers for the mid-infrared spectral range. physica status solidi (a), 205 (1). pp. 129-143. ISSN 0031-8965

Yin, M. and Krier, A. and Carrington, P. J. and Jones, Robert and Krier, S. E. (2008) Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE. In: NARROW GAP SEMICONDUCTORS 2007 :. Springer, Guildford, pp. 69-72. ISBN 978-1-4020-8424-9

Yin, Min and Krier, A. and Carrington, Peter J. and Jones, Robert and Krier, Susan E. (2008) Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE. In: Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK :. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 69-72. ISBN 978-1-4020-8424-9

Smith, S. J. and Przeslak, S. J. B. and Nash, G. R. and Storey, C. J. and Andreev, A. D. and Krier, A. and Yin, M. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2008) Electroluminescence from InSb-based mid-infrared quantum well lasers. In: Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK :. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 159-161. ISBN 978-1-4020-8424-9

Yin, Min and Krier, A. and Jones, Robert (2008) Growth of InAsSb quantum wells by liquid phase epitaxy. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK :. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 65-68. ISBN 978-1-4020-8424-9

Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007 :. Springer, Guildford, pp. 129-131. ISBN 978-1-4020-8424-9

Solov'ev, V. A. and Carrington, Peter and Zhuang, Qian and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK :. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 129-131. ISBN 978-1-4020-8424-9

Nash, G. R. and Smith, S. J. and Coomber, S. D. and Przeslak, S. and Andreev, A. and Carrington, P. and Yin, M. and Krier, A. and Buckle, L. and Emeny, M. T. and Ashley, T. (2007) Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. . Applied Physics Letters, 91 (13). p. 131118. ISSN 1077-3118

Yin, M. and Krier, A. and Jones, Robert and Carrington, Peter (2007) Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. . Applied Physics Letters, 91 (10): 101104. ISSN 1077-3118

Krier, A. and Smirnov, V. M. and Batty, P. J. and Yin, M. and Lai, K. T. and Rybchenko, S. and Haywood, S. K. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. . Applied Physics Letters, 91 (8). 082102. ISSN 1077-3118

Krier, A. and Stone, M. and Krier, S. E. (2007) Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. . Semiconductor Science and Technology, 22 (6). pp. 624-628. ISSN 0268-1242

Krier, A. and Smirnov, V. M. and Batty, P. J. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. . Applied Physics Letters, 90 (21). p. 211115. ISSN 1077-3118

Zhuang, Q. D. and Krier, A. and Stanley, C. R. (2007) Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101 (10). p. 103536. ISSN 1089-7550

Cripps, S. A. and Hosea, T. J. C. and Krier, A. and Smirnov, V. and Batty, P. J. and Zhuang, Q. D. and Lin, H. H. and Liu, P. W. and Tsai, G. (2007) Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. . Applied Physics Letters, 92 (17). p. 172106. ISSN 1077-3118

Smirnov, V. M. and Batty, P. J. and Jones, Robert and Krier, A. and Vasil'ev, V. I. and Gagis, G. S. and Kuchinskii, V. I. (2007) GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. physica status solidi (a), 204 (4). pp. 1047-1050. ISSN 0031-8965

Averkiev, N. S. and Sherstnev, V. V. and Monakhov, A. M. and Grebenshikova, E. A. and Kislyakova, A. Y. and Yakovlev, Y. P. and Krier, A. and Wright, D. A. (2007) Physical working principles of semiconductor disk lasers. . Low Temperature Physics, 33 (2-3). pp. 283-290. ISSN 1090-6517

Norris, G. and Krier, A. and Sherstnev, V. V. and Monakhov, A. and Baranov, A. (2007) Mode behavior in InAs midinfrared whispering gallery lasers. Applied Physics Letters, 90 (1). 011105. ISSN 1077-3118

Pugh, J. R. and Buss, I. J. and Nash, G. R. and AshleY, T. and Krier, A. and Cryan, M. J. and Rarity, J. G. (2007) FDTD modelling of mid infrared disk lasers. In: ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4 :. IEEE, Rome, pp. 208-211. ISBN 1-4244-1249-8

Smirnov, V. M. and Batty, P. J. and Krier, A. and Jones, Robert (2007) Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. In: Quantum Sensing and Nanophotonic Devices IV :. SPIE-INT SOC OPTICAL ENGINEERING, San Jose, p. 47918. ISBN 978-0-8194-6592-4

Liu, P. W. and Tsai, G. and Lin, H. H. and Krier, A. and Zhuang, Q. D. and Stone, M, M. (2006) Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. . Applied Physics Letters, 89 (20). p. 201115. ISSN 1077-3118

Krier, A. and Stone, M. and Zhuang, Q. D. and Liu, P. W. and Tsai, G. and Lin, H. H. (2006) Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . Applied Physics Letters, 89 (9). 091110. ISSN 1077-3118

Krier, A. and Suleiman, W. (2006) Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. . Applied Physics Letters, 89 (8). 083512. ISSN 1077-3118

Krier, A. and Huang, X. L. (2006) Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . Journal of Physics D: Applied Physics, 39 (2). pp. 255-261. ISSN 0022-3727

Yin, M. and Krier, A. and Jones, Robert and Krier, S. and Campbell, D. (2006) Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707. In: Technologies for Optical Countermeasures III :. SPIE-INT SOC OPTICAL ENGINEERING, Stockholm, p. 39707. ISBN 978-0-8194-6495-8

Yin, M. and Krier, A. and Krier, S. and Jones, Robert and Carrington, P. (2006) Mid-infrared diode lasers for free space optical communications. In: Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays :. SPIE-INT SOC OPTICAL ENGINEERING, Stockholm, U101-U106. ISBN 978-0-8194-6497-2

Sherstnev, V. V. and Monakhov, A. M. and Astakhova, A. P. and Kislyakova, A. Y. and Yakovlev, Y. P. and Averkiev, N. S. and Krier, A. and Hill, G. (2005) Semiconductor WGM lasers for the mid-IR spectral range. Semiconductors, 39 (9). pp. 1087-1092. ISSN 1063-7826

Krier, A. and Huang, X. L. (2005) Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. . Applied Physics Letters, 86 (6). 061113. ISSN 1077-3118

Sherstnev, V. and Monakhov, A. and Krier, A. and Wright, D. A. (2005) InAs whispering gallery mode lasers for the mid-infrared spectral range. . IEE Proceedings - Optoelectronics, 152 (1). pp. 1-5. ISSN 1350-2433

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2004) Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . Journal of Electronic Materials, 33 (8). pp. 867-872. ISSN 0361-5235

Chakrabarti, P. and Krier, A. and Huang, X. L. and Fenge, P. (2004) Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. . IEEE Electron Device Letters, 25 (5). pp. 283-285. ISSN 0741-3106

Monakhov, A. and Krier, A. and Sherstnev, V. V. (2004) The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . Semiconductor Science and Technology, 19 (3). pp. 480-484. ISSN 0268-1242

Chakrabarti, P. and Krier, A. and Morgan, A. F. (2003) Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. . IEEE Transactions on Electron Devices, 50 (10). pp. 2049-2058. ISSN 0018-9383

Chakrabarti, P. and Krier, A. and Morgan, A. F. (2003) Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results. Optical Engineering, 42 (9). pp. 2614-2623. ISSN 0091-3286

Wright, D. A. and Sherstnev, V. V. and Krier, A. and Monakhov, A. M. and Hill, G. (2003) Mid-infrared whispering gallery mode ring lasers and LEDs. . IEE Proceedings - Optoelectronics, 150 (4). pp. 314-317. ISSN 1350-2433

Krier, A. and Sherstnev, V. V. (2003) The influence of melt purification and structure defects on mid-infrared light emitting diodes. . Journal of Physics D: Applied Physics, 36 (13). pp. 1484-1488. ISSN 0022-3727

Krier, A. and Sherstnev, V. V. and Wright, D. and Monakhov, A. M. and Hill, G. (2003) Mid-infrared ring laser. . Electronics Letters, 39 (12). pp. 916-917. ISSN 0013-5194

Sherstnev, V. V. and Krier, A. and Balanov, A. G. and Janson, N. B. and Silchenko, A. N. and McClintock, Peter V. E. (2003) Mid-infrared lasing induced by noise. Fluctuation and Noise Letters, 3 (1). L91-L95. ISSN 0219-4775

Choulis, S. A. and Andreev, A. and Merrick, M. and Adams, A. R. and Murdin, B. N. and Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . Applied Physics Letters, 82 (8). pp. 1149-1151. ISSN 1077-3118

Choulis, S. A. and Andreev, A. and Merrick, M. and Jin, S. and Clarke, D. G. and Murdin, B. N. and Adams, A. R. and Krier, A. and Sherstnev, V. V. (2003) The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . physica status solidi (b), 235 (2). pp. 312-316. ISSN 0370-1972

Huang, X. L. and Labadi, Z. and Hammiche, A. and Krier, A. (2002) Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . Journal of Physics D: Applied Physics, 35 (23). pp. 3091-3095. ISSN 0022-3727

Krier, A. and Huang, X. L. (2002) Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. . Physica E: Low-dimensional Systems and Nanostructures, 15 (3). pp. 159-163. ISSN 1386-9477

Sherstnev, V. and Krier, A. and Popov, A. and Werle, P. (2002) Tuning characteristics of InAsSb continuous-wave lasers. . Applied Physics Letters, 80 (20). pp. 3676-3678. ISSN 1077-3118

Krier, A. and Sherstnev, V. V. and Gao, H. H. and Monakhov, A. M. and Hill, G. (2002) Optical switching in midinfrared light-emitting diodes . Applied Physics Letters, 80 (16). pp. 2821-2823. ISSN 1077-3118

Moiseev, K. D. and Krier, A. and Mikhailova, M. P. and Yakovlev, Y. P. (2002) Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction. Journal of Physics D: Applied Physics, 35 (7). pp. 631-636. ISSN 0022-3727

Sherstnev, V. V. and Krier, A. and Hill, G. (2002) High tunability and superluminescence in InAs mid-infrared light emitting diodes. . Journal of Physics D: Applied Physics, 35 (3). pp. 196-198. ISSN 0022-3727

Charykov, N. A. and Sherstnev, V. V. and Krier, A. (2002) General theory of multi-phase melt crystallization. . Journal of Crystal Growth, 234 (4). pp. 762-772. ISSN 0022-0248

Moiseev, K. D. and Krier, A. and Yakovlev, Y. P. (2001) Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. . Journal of Applied Physics, 90 (8). pp. 3988-3992. ISSN 1089-7550

Krier, A. and Huang, X. L. and Hammiche, A. (2001) Liquid phase epitaxial growth and morphology of InSb quantum dots. . Journal of Physics D: Applied Physics, 34 (6). pp. 874-878. ISSN 0022-3727

Krier, A. (2001) Physics and technology of mid-infrared light emitting diodes. . Philosophical Transactions A: Mathematical, Physical and Engineering Sciences, 359 (1780). pp. 599-618. ISSN 1364-503X

Krier, A. and Sherstnev, V. V. (2001) LEDs for formaldehyde detection at 3.6 mu m. . Journal of Physics D: Applied Physics, 34 (3). pp. 428-432. ISSN 0022-3727

Zhang, Q. S. and Liu, F. Q. and Zhang, Y. Z. and Wang, Z. G. and Gao, H. H. and Krier, A. (2001) Investigation on InGaAs/InAlAs quantum cascade lasers. Journal of Infrared and Millimeter Waves, 20 (1). pp. 41-43. ISSN 1001-9014

Krier, A. and Sherstnev, V. V. and Labadi, Z. and Krier, S. E. and Gao, H. H. (2000) Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . Journal of Physics D: Applied Physics, 33 (24). pp. 3156-3160. ISSN 0022-3727

Sherstnev, V. V. and Monahov, A. M. and Krier, A. and Hill, G. (2000) Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. . Applied Physics Letters, 77 (24). pp. 3908-3910. ISSN 1077-3118

Krier, A. and Huang, X. L. and Hammiche, A. (2000) Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. . Applied Physics Letters, 77 (23). pp. 3791-3793. ISSN 1077-3118

Arivuoli, D. and Lawson, N. S. and Krier, A. and Attolini, G. and Pelosi, C. (2000) Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. . Materials Chemistry and Physics, 66 (2 - 3). pp. 207-212. ISSN 0254-0584

Krier, A. and Krier, S. E. and Labadi, Z. (2000) Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A, 71 (3). pp. 249-253. ISSN 0947-8396

Gao, H. H. and Krier, A. and Sherstnev, V. V. (2000) Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. . Applied Physics Letters, 77 (6). pp. 872-874. ISSN 1077-3118

Krier, A. and Sherstnev, V. V. and Gao, H. H. (2000) A novel LED module for the detection of H2S at 3.8 mu m. . Journal of Physics D: Applied Physics, 33 (14). pp. 1656-1661. ISSN 0022-3727

Krier, A. and Gao, H. H. and Sherstnev, V. V. (2000) Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. . IEE Proceedings - Optoelectronics, 147 (3). pp. 217-221. ISSN 1350-2433

Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE Proceedings - Optoelectronics, 147 (3). pp. 222-224. ISSN 1350-2433

Krier, A. and Sherstnev, V. V. (2000) Powerful interface light emitting diodes for methane gas detection. . Journal of Physics D: Applied Physics, 33 (2). pp. 101-106. ISSN 0022-3727

Krier, A. and Gao, H. H. and Sherstnev, V. V. and Yakovlev, Y. (1999) High power 4.6 mu m light emitting diodes for CO detection. . Journal of Physics D: Applied Physics, 32 (24). pp. 3117-3121. ISSN 0022-3727