Krier, A. and Stone, M. and Zhuang, Q. D. and Liu, P. W. and Tsai, G. and Lin, H. H. (2006) Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. . Applied Physics Letters, 89 (9). 091110. ISSN 1077-3118
Abstract
Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.