Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. IEEE, Baltimore, pp. 2813-2814. ISBN 978-1-4244-5184-5

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Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qa75
Subjects:
ID Code:
56924
Deposited By:
Deposited On:
18 Aug 2012 14:49
Refereed?:
Yes
Published?:
Published
Last Modified:
16 May 2020 01:02