Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

Carrington, P. J. and Zhuang, Q. and Yin, M. and Krier, A. (2009) Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology, 24 (7). 075001. ISSN 0268-1242

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Abstract

Intense room temperature emission at 3.7 mu m is reported from light-emitting diodes (LEDs) which contain ten InAsSb/InAs type II multi quantum wells grown by molecular beam epitaxy. Interpretation of the spectra revealed the existence of two confined heavy-hole states with emission peaks of 0.33 and 0.37 eV at 4 K. Analysis of the temperature dependence of the electroluminescence shows that emission occurred predominantly from the excited heavy-hole state at high temperatures. At room temperature, the devices produced a quasi-cw power of 12 mu W at 100 mA injection current corresponding to an internal quantum efficiency of 2.2%.

Item Type: Journal Article
Journal or Publication Title: Semiconductor Science and Technology
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27072
Deposited By: Dr Susan E. Krier
Deposited On: 29 Sep 2009 08:17
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 06:43
URI: https://eprints.lancs.ac.uk/id/eprint/27072

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