Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007. Springer, Guildford, pp. 129-131. ISBN 978-1-4020-8424-9
Full text not available from this repository.Abstract
We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.