Properties of dilute InAsN layers grown by liquid phase epitaxy.

Dhar, S. and Das, T. D. and de la Mare, M. and Krier, A. (2008) Properties of dilute InAsN layers grown by liquid phase epitaxy. Applied Physics Letters, 93 (7). 071905. ISSN 1077-3118

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Abstract

We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N similar to 0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. (c) 2008 American Institute of Physics.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Article number : 071905
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27077
Deposited By: Dr Susan E. Krier
Deposited On: 29 Sep 2009 10:09
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 06:43
URI: https://eprints.lancs.ac.uk/id/eprint/27077

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