The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

Krier, A. and Sherstnev, V. V. (2003) The influence of melt purification and structure defects on mid-infrared light emitting diodes. . Journal of Physics D: Applied Physics, 36 (13). pp. 1484-1488. ISSN 0022-3727

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Abstract

Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mum and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH4 absorption spectrum and potentially could form the basis of a practical infrared CH4 gas sensor.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
4446
Deposited By:
Deposited On:
14 Mar 2008 14:38
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Mar 2020 02:50