Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

Cheetham, K. J. and Krier, A. and Patel, I. I. and Martin, F. L. and Tzeng, J-S and Wu, C-J and Lin, H-H and , EPSRC Studentship for KJC (Funder) (2011) Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. Journal of Physics D: Applied Physics, 44 (8). 085405. ISSN 0022-3727

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Abstract

The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
40781
Deposited By:
Deposited On:
06 May 2011 13:04
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:09