Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

Carrington, P. J. and Wagener, M. C. and Botha, J. R. and Sanchez, A. M. and Krier, A. (2012) Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. Applied Physics Letters, 101 (23). ISSN 0003-6951

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Abstract

GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 62323
Deposited By: ep_importer_pure
Deposited On: 13 Feb 2013 16:40
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 08:18
URI: https://eprints.lancs.ac.uk/id/eprint/62323

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