Choulis, S. A. and Andreev, A. and Merrick, M. and Adams, A. R. and Murdin, B. N. and Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . Applied Physics Letters, 82 (8). pp. 1149-1151. ISSN 1077-3118
Abstract
The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.