Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118
Full text not available from this repository.Abstract
Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.