Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118

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Abstract

Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
27066
Deposited By:
Deposited On:
29 Sep 2009 08:12
Refereed?:
Yes
Published?:
Published
Last Modified:
03 Mar 2020 08:16