Velichko, A. V. and Patane, A. and Capizzi, M. and Sandall, I. C. and Giubertoni, D. and Makarovsky, O. and Polimeni, A. and Krier, A. and Zhuang, Q. and Tan, C. H. (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106 (2): 022111. ISSN 0003-6951
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Abstract
We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.