Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Cook, N. B. and Krier, A. (2009) Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Applied Physics Letters, 95 (2). 021110. ISSN 1077-3118

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Abstract

InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 27075
Deposited By: Dr Susan E. Krier
Deposited On: 29 Sep 2009 08:29
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 06:43
URI: https://eprints.lancs.ac.uk/id/eprint/27075

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