InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Vanov, S. V. and Krier, A. (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40 (3). pp. 469-472. ISSN 0026-2692

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Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Journal or Publication Title: Microelectronics Journal
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 56515
Deposited By: ep_importer_pure
Deposited On: 07 Aug 2012 09:36
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 08:02
URI: https://eprints.lancs.ac.uk/id/eprint/56515

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