Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Vanov, S. V. and Krier, A. (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40 (3). pp. 469-472. ISSN 0026-2692
Full text not available from this repository.Abstract
We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.