Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118
Full text not available from this repository.Abstract
We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.