Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. and , EU Contract No. RII3-CT-2004-506239 (Funder) and , DFG Grant Nos. DR832/3-1 (Funder) and , DFG KO 3743/1-1 (Funder) and , AOBJ: 550341 (Funder) (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118

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We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Departments: Faculty of Science and Technology > Physics
ID Code: 40783
Deposited By: Dr Susan E. Krier
Deposited On: 06 May 2011 13:14
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 07:09

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