Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, 94 (9). 091111. ISSN 1077-3118
Full text not available from this repository.Abstract
Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at similar to 3.3 mu m at 200 K for the 1.1% structure. ©2009 American Institute of Physics