["page_head" not defined] ["page_js" not defined] ["page_preload" not defined]
["page_header" not defined]

Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, CLEO 2009. UNSPECIFIED, USA. ISBN 9781557528698

Full text not available from this repository.

Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.

Item Type: Contribution in Book/Report/Proceedings
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3107
Subjects:
Departments: Faculty of Science and Technology > Engineering
Faculty of Science and Technology > Physics
ID Code: 129744
Deposited By: ep_importer_pure
Deposited On: 22 Jun 2019 00:54
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 10:53
URI: https://eprints.lancs.ac.uk/id/eprint/129744

Actions (login required)

View Item View Item
["page_footer" not defined]