Krier, A. and Sherstnev, V. V. and Labadi, Z. and Krier, S. E. and Gao, H. H. (2000) Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. . Journal of Physics D: Applied Physics, 33 (24). pp. 3156-3160. ISSN 0022-3727
Full text not available from this repository.Abstract
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 mum at 250 K.