Modelling of InAs thin layer growth from the liquid phase. .

Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE Proceedings - Optoelectronics, 147 (3). pp. 222-224. ISSN 1350-2433

Abstract

InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.