Modelling of InAs thin layer growth from the liquid phase. .

Krier, A. and Labadi, Z. (2000) Modelling of InAs thin layer growth from the liquid phase. . IEE Proceedings - Optoelectronics, 147 (3). pp. 222-224. ISSN 1350-2433

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Abstract

InAs quantum wells have been grown using the rapid slider liquid phase epitaxial growth technique. Analysis of the layer thickness data as a function of supercooling and contact time revealed the presence of two different growth mechanisms. A mathematical model of the epitaxial growth bared around simple assumptions relating to melt rolling has been shown to give a good explanation of the experimental findings and also provides an integrated mathematical description of the growth phenomena.

Item Type:
Journal Article
Journal or Publication Title:
IEE Proceedings - Optoelectronics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
4475
Deposited By:
Deposited On:
18 Mar 2008 13:22
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:11