Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Krier, A. and Krier, S. E. and Labadi, Z. (2000) Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. . Applied Physics A, 71 (3). pp. 249-253. ISSN 0947-8396

Full text not available from this repository.

Abstract

InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics A
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
4474
Deposited By:
Deposited On:
18 Mar 2008 13:36
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 07:11