Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. UNSPECIFIED, USA. ISBN 9781557528698

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Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ∼3.3μm at 200K with 1.1% strain in the QW.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2500/2504
Subjects:
ID Code:
129746
Deposited By:
Deposited On:
22 Jun 2019 00:54
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 10:53