Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9): 094009. ISSN 0268-1242
Full text not available from this repository.Abstract
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.
Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2500/2505
Subjects:
?? inasnband-structurephotoluminescencespectroscopyoptical-propertiesmolecular-beam epitaxygaas(001)mbe growthnitrogenalloysmaterials chemistryelectronic, optical and magnetic materialselectrical and electronic engineeringcondensed matter physics ??
Departments:
ID Code:
62324
Deposited By:
Deposited On:
13 Feb 2013 15:55
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2024 13:36