Items where Author is "Carrington, P. J."

Journal Article

Wagener, M. C. and Carrington, P. J. and Botha, J. R. and Krier, A. (2014) Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings. Journal of Applied Physics, 116 (4): 044304. ISSN 0021-8979

Hodgson, P. D. and Young, R. J. and Kamarudin, M. Ahmad and Carrington, P. J. and Krier, A. and Zhuang, Q. D. and Smakman, E. P. and Koenraad, P. M. and Hayne, M. (2013) Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures. Journal of Applied Physics, 114 (7): 073519. ISSN 0021-8979

Carrington, P. J. and Wagener, M. C. and Botha, J. R. and Sanchez, A. M. and Krier, A. (2012) Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. Applied Physics Letters, 101 (23): 231101. ISSN 0003-6951

Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9): 094009. ISSN 0268-1242

Cheetham, K. J. and Carrington, P. J. and Krier, A. and Patel, I. I. and Martin, F. L. (2012) Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb. Semiconductor Science and Technology, 27 (1): 015004. -. ISSN 0268-1242

Cheetham, K. J. and Carrington, P. J. and Cook, N. B. and Krier, A. (2011) Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. Solar Energy Materials and Solar Cells, 95 (2). pp. 534-537. ISSN 0927-0248

de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43 (34). p. 345103. ISSN 0022-3727

Carrington, P. J. and Zhuang, Q. and Yin, M. and Krier, A. (2009) Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology, 24 (7). 075001. ISSN 0268-1242

Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, 94 (9). 091111. ISSN 1077-3118

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Vanov, S. V. and Krier, A. (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40 (3). pp. 469-472. ISSN 0026-2692

Zhuang, Q. and Carrington, P. J. and Krier, A. (2008) Growth optimization of self-organized InSb/InAs quantum dots. Journal of Physics D: Applied Physics, 41 (23): 232003. ISSN 0022-3727

Yin, M. and Nash, G. R. and Coomber, S. D. and Buckle, L. and Carrington, P. J. and Krier, A. and Andreev, A. and Przeslak, S. J. B. and de Valicourt, G. and Smith, S. J. and Emeny, M. T. and Ashley, T. (2008) GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters, 93 (12). p. 121106. ISSN 1077-3118

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118

Contribution in Book/Report/Proceedings

Carrington, P. J. and Delli, E. and Hodgson, P. D. and Repiso, E. and Craig, A. and Marshall, A. and Krier, A. (2017) Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. In: 30th Annual Conference of the IEEE Photonics Society, IPC 2017 :. Institute of Electrical and Electronics Engineers Inc., USA, pp. 307-308. ISBN 9781509065783

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, CLEO 2009 :. UNSPECIFIED, USA. ISBN 9781557528698

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 :. UNSPECIFIED, USA. ISBN 9781557528698

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: International Quantum Electronics Conference, IQEC 2009 :. Optical Society of America (OSA), USA. ISBN 9781557528698

Nash, G. R. and Przeslak, S. J. B. and Smith, S. J. and de Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on :. IEEE, Baltimore, pp. 2813-2814. ISBN 978-1-4244-5184-5

Yin, M. and Krier, A. and Carrington, P. J. and Jones, Robert and Krier, S. E. (2008) Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE. In: NARROW GAP SEMICONDUCTORS 2007 :. Springer, Guildford, pp. 69-72. ISBN 978-1-4020-8424-9