Items where Author is "Zhuang, Q."

Journal Article

Cao, P. and Wang, T. and Peng, H. and Li, Z. and Zhuang, Q. and Zheng, W. (2024) Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber. Chinese Optics Letters, 22 (1): 012502.

Verstijnen, T.J.F. and Tjeertes, D. and Banfi, E.G. and Zhuang, Q. and Koenraad, P.M. (2023) Atomic scale analysis of N dopants in InAs. Physical review B, 108 (4): 045302. ISSN 1098-0121

Tian, D. and Wang, J. and Zhuang, Q. and Wu, S. and Yu, Y. and Ding, K. (2023) An electrochemiluminescence biosensor based on Graphitic carbon nitride luminescence quenching for detection of AFB. Food Chemistry, 404 (Pt A): 134183. ISSN 0308-8146

Wang, H. and Wang, F. and Xia, H. and Wang, P. and Li, T. and Li, J. and Wang, Z. and Sun, J. and Wu, P. and Ye, J. and Zhuang, Q. and Yang, Z. and Fu, L. and Hu, W. and Chen, X. and Lu, W. (2021) Direct observation and manipulation of hot electrons at room temperature. National Science Review, 8 (9): nwaa295. ISSN 2053-714X

Wang, H. and Wang, F. and Xu, T. and Xia, H. and Xie, R. and Zhou, X. and Ge, X. and Liu, W. and Zhu, Y. and Sun, L. and Guo, J. and Ye, J. and Zubair, M. and Luo, M. and Yu, C. and Sun, D. and Li, T. and Zhuang, Q. and Fu, L. and Hu, W. and Lu, W. (2021) Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics. Nano Letters, 21 (18). pp. 7761-7768. ISSN 1530-6984

Anyebe, E.A. and Kesaria, M. and Sanchez, A.M. and Zhuang, Q. (2020) A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A, 126 (6): 427. ISSN 0947-8396

Velichko, A. V. and Patane, A. and Capizzi, M. and Sandall, I. C. and Giubertoni, D. and Makarovsky, O. and Polimeni, A. and Krier, A. and Zhuang, Q. and Tan, C. H. (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106 (2): 022111. ISSN 0003-6951

Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9): 094009. ISSN 0268-1242

Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118

Ibanez, J. and Oliva, R. and de la Mare, M. and Schmidbauer, M. and Hernandez, S. and Pellegrino, P. and Scurr, D. J. and Cusco, R. and Artus, L. and Shafi, M. and Mari, R. H. and Henini, M. and Zhuang, Q. and Godenir, A. M. R. and Krier, A. (2010) Structural and optical properties of dilute InAsN grown by molecular beam epitaxy. Journal of Applied Physics, 108 (10). p. 103504. ISSN 1089-7550

de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43 (34). p. 345103. ISSN 0022-3727

Chen, R. and Phann, S. and Sun, H. D. and Zhuang, Q. and Godenir, A. M. R. and Krier, Anthony (2009) Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth. Applied Physics Letters, 95 (26). p. 261905. ISSN 1077-3118

de la Mare, M. and Zhuang, Q. and Krier, A. and Patane, A. and Dhar, S. (2009) Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95 (3). 031110. ISSN 1077-3118

Carrington, P. J. and Zhuang, Q. and Yin, M. and Krier, A. (2009) Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology, 24 (7). 075001. ISSN 0268-1242

Kudrawiec, R. and Misiewicz, J. and Zhuang, Q. and Godenir, A. M. R. and Krier, A. (2009) Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys. Applied Physics Letters, 94 (15). p. 151902. ISSN 1077-3118

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Vanov, S. V. and Krier, A. (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40 (3). pp. 469-472. ISSN 0026-2692

Zhuang, Q. and Carrington, P. J. and Krier, A. (2008) Growth optimization of self-organized InSb/InAs quantum dots. Journal of Physics D: Applied Physics, 41 (23): 232003. ISSN 0022-3727

Zhuang, Q. and Godenir, A. and Krier, A. and Tsai, G. and Lin, H. H. (2008) Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics. Applied Physics Letters, 93 (12). p. 121903. ISSN 1077-3118

Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118

Zhuang, Q. and Godenir, A. and Krier, A. (2008) Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. Journal of Physics D: Applied Physics, 41 (13). p. 132002. ISSN 0022-3727

Zhuang, Q. and Godenir, A. M. R. and Krier, A. and Lai, K. T. and Haywood, S. K. (2008) Room temperature photoluminescence at 4.5 mu m from InAsN. Journal of Applied Physics, 103 (6). 063520. ISSN 1089-7550

Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900: 69000I. ISSN 0277-786X

Contribution in Book/Report/Proceedings

Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007 :. Springer, Guildford, pp. 129-131. ISBN 978-1-4020-8424-9