Items where Author is "Hayne, Manus"

Journal Article

Trevisan, Aurelia and Hodgson, Peter and Lane, Dominic and Hayne, Manus and Koenraad, P.M. (2023) Defect formation in InGaAs/AlSb/InAs memory devices. Journal of Vacuum Science and Technology B, 41 (4): 044001. ISSN 1071-1023

Hodgson, Peter and Lane, Dominic and Carrington, Peter and Delli, Evangelia and Beanland, Richard and Hayne, Manus (2022) ULTRARAM : A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8 (4): 2101103. ISSN 2199-160X

Lane, Dominic and Hayne, Manus (2021) Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory. Journal of Physics D: Applied Physics, 54 (35): 335104. ISSN 0022-3727

Lane, Dominic and Hodgson, Peter and Potter, Richard and Beanland, Richard and Hayne, Manus (2021) ULTRARAM : toward the development of a III-V semiconductor, non-volatile, random-access memory. IEEE Transactions on Electron Devices, 68 (5). pp. 2271-2274. ISSN 0018-9383

Wilson, Tom and Hodgson, Peter and Robson, Alexander and Jackson, Charles and Grew, Benjamin and Hayne, Manus (2020) A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. Semiconductor Science and Technology, 35 (5): 055003. ISSN 0268-1242

Lane, Dominic and Hayne, Manus (2020) Simulations of ultra-low power non-volatile cells for random access memory. IEEE Transactions on Electron Devices, 67 (2). pp. 474-480. ISSN 0018-9383

Tizno, Ofogh and Marshall, Andrew and Fernández-Delgado, Natalia and Herrera, Miriam and Molina, Sergio I. and Hayne, Manus (2019) Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells. Scientific Reports, 9: 8950. ISSN 2045-2322

Thomas, David and Hunt, Ryan James and Drummond, Neil David and Hayne, Manus (2019) Binding energies of excitonic complexes in type-II quantum rings from diffusion quantum Monte Carlo calculations. Physical Review B: Condensed Matter and Materials Physics, 99 (11): 115306. ISSN 1098-0121

Hanks, Laura and Hayne, Manus and Marshall, Andrew Robert Julian and Ponomarenko, Leonid Alexandrovich (2018) Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions. Journal of Physics: Conference Series, 964: 012006. ISSN 1742-6588

Khattak, Shaukat Ali and Hayne, Manus and Huang, Junwei and Vanacken, Johan and Moshchalkov, Victor and Seravalli, Luca and Trevisi, Giovanna and Frigeri, Paola (2017) Exciton confinement in strain-engineered metamorphic InAs/InxGa1-xAs quantum dots. Physical review B, 96 (19): 195301. ISSN 2469-9950

Hayne, Manus and Harrison, Samuel (2017) Photoelectrolysis Using Type-II Semiconductor Heterojunctions. Scientific Reports, 7: 11638. ISSN 2045-2322

Fernández-Delgado, N. and Herrera, M. and Chisholm, M. F. and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Hayne, Manus and Molina, S. I. (2017) Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. Applied Surface Science, 395. pp. 136-139. ISSN 0169-4332

Fernández-Delgado, N. and Herrera, M. and Chisholm, M. F. and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Hayne, Manus and Molina, S. I. (2016) Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots. Journal of Materials Science, 51 (16). pp. 7691-7698. ISSN 0022-2461

Qiu, Feng and Qiu, Weiyang and Li, Yulian and Wang, Xingjun and Zhang, Yun and Zhou, Xiaohao and Lv, Yingfei and Sun, Yan and Deng, Huiyong and Hu, Shuhong and Dai, Ning and Wang, Chong and Yang, Yu and Zhuang, Qiandong and Hayne, Manus and Krier, A. (2016) An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. Nanotechnology, 27 (6): 065602. ISSN 0957-4484

Harrison, Samuel and Young, Matthew and Hodgson, Peter David and Young, Robert James and Hayne, Manus and Danos, Eleftherios and Schliwa, A. and Strittmatter, Andre and Lenz, Andrea and Eisele, Holger and Pohl, Udo and Bimberg, Dieter (2016) Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs. Physical review B, 93: 085302. ISSN 1098-0121

Hodgson, Peter and Hayne, Manus and Robson, Alex and Zhuang, Qiandong and Danos, Eleftherios (2016) GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics, 119 (4): 044305. ISSN 0021-8979

Chang, Yu-Chen and Robson, Alexander and Harrison, Samuel and Zhuang, Qiandong and Hayne, Manus (2015) Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. AIP Advances, 5 (6): 067141. ISSN 2158-3226

Chang, Yu-Chen and Robson, Alexander and Harrison, Samuel and Zhuang, Qiandong and Hayne, Manus (2015) Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. AIP Advances, 5 (6). ISSN 2158-3226

Hodgson, Peter and Hayne, Manus and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Birindelli, Simone and Capizzi, Mario (2014) Hydrogenation of GaSb/GaAs quantum rings. Applied Physics Letters, 105: 081907. ISSN 0003-6951

Hodgson, Peter and Young, Robert and Ahmad Kamarudin, Mazliana and Zhuang, Qiandong and Hayne, Manus (2013) Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings. Physical review B, 88 (15): 155322. ISSN 1550-235X

Mahajumi, Abu Syed and Carrington, Peter and Kostakis, Ioannis and Missous, Mohammed and Sanchez, Ana and Zhuang, Qiandong and Young, Robert and Hayne, Manus and Krier, Anthony (2013) Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics, 46 (30): 305104. ISSN 0022-3727

Carrington, Peter J. and Young, Robert J. and Hodgson, Peter D. and Sanchez, Ana M. and Hayne, Manus and Krier, Anthony (2013) Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings. Crystal Growth and Design, 13 (3). pp. 1226-1230. ISSN 1528-7483

Robson, Alex and Grishin, Ilja and Young, Robert and Sanchez, A. M. and Kolosov, Oleg and Hayne, Manus (2013) High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. ACS Applied Materials and Interfaces, 5 (8). pp. 3241-3245. ISSN 1944-8244

Hayne, Manus and Bansal, Bhavtosh (2012) High-field magneto-photoluminescence of semiconductor nanostructures. Luminescence, 27 (3). pp. 179-196. ISSN 1522-7235

Nuytten, Thomas and Hayne, Manus and Bansal, Bhavtosh and Liu, H. Y. and Hopkinson, Mark and Moshchalkov, Victor V. (2011) Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells. Physical review B, 84: 045302. ISSN 1550-235X

Ahmad Kamarudin, Mazliana and Hayne, Manus and Zhuang, Q. D. and Kolosov, Oleg and Nuytten, Thomas and Moshchalkov, V. V. and Dinelli, F. (2010) GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer. Journal of Physics D: Applied Physics, 43 (6). 065402. ISSN 0022-3727

Bansal, Bhavtosh and Godefroo, Stefanie and Hayne, Manus and Medeiros-Ribeiro, Gilberto and Moshchalkov, Victor (2009) Extended excitons and compact heliumlike biexcitons in type-II quantum dots. Physical review B, 80 (20): 205137. ISSN 1098-0121

Nuytten, Thomas and Hayne, Manus and Henini, Mohamed and Moshchalkov, Victor V. (2009) Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. Microelectronics Journal, 40 (3). pp. 486-488.

Bansal, Bhavtosh and Hayne, Manus and Geller, Martin and Bimberg, Dieter and Moshchalkov, Victor (2008) Excitonic Mott transition in type-II quantum dots. Physical review B, 77: 241304(R). ISSN 1098-0121

Nuytten, Thomas and Hayne, Manus and Henini, Mohamed and Moshchalkov, Victor V. (2008) Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields. Physical review B, 77. p. 115348. ISSN 1550-235X

Godefroo, Stefanie and Hayne, Manus and Jivanescu, Michaela and Stesmans, Andre and Zacharias, Margit and Lededev, Oleg and Van Tendeloo, Gustaaf and Moshchalkov, Victor V. (2008) Classification and control of the origin of photoluminescence from Si nanocrystals. Nature Nanotechnology, 3 (3). pp. 174-178. ISSN 1748-3387

Cornet, Charles and Hayne, Manus and Schliwa, Andrei and Dore, Francois and Even, Jacky and Bimberg, Dieter and Moshchalkov, Victor V. and Loualiche, Slimane (2007) InAs/InP quantum dots (QD) : From fundamental understanding to coupled QD 1.55 mu m laser applications. Physica Status Solidi C, 4 (2). pp. 458-461. ISSN 1610-1634

Cornet, Charles and Levallois, Christophe and Caroff, P. and Folliot, Hervé and Labbé, Christophe and Even, Jacky and Le Corre, Alain and Loualiche, Slimane and Hayne, Manus and Moshchalkov, Victor V. (2005) Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence. Applied Physics Letters, 87 (23): 233111. -. ISSN 1077-3118

Hayne, Manus and Maes, J and Manz, Y M and Schmidt, O G and Moshchalkov, V V (2004) Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2. Physica E: Low-dimensional Systems and Nanostructures, 21 (2-4). pp. 257-260. ISSN 1386-9477

Hayne, Manus and Bersier, Stefan and Maes, Jochen and Moshchalkov, Victor V and Schliwa, Andrei and Muller-Kirsch, Lutz and Kapteyn, Christian and Heitz, Robert and Bimberg, Dieter (2003) Electron localization by self-assembled GaSb/GaAs quantum dots. Applied Physics Letters, 82 (24). pp. 4355-4357. ISSN 1077-3118

Hayne, Manus and Maes, Jochen and Moshchalkov, Victor V and Manz, Yvonne M and Schmidt, Oliver G and Eberl, Karl (2001) Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots. Applied Physics Letters, 79 (1). pp. 45-47. ISSN 1077-3118

Hayne, Manus and USHER, A and PLAUT, A S and PLOOG, K (1994) Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions. Physical review B, 50 (23). pp. 17208-17216. ISSN 0163-1829

Hayne, Manus and USHER, A and HARRIS, J J and FOXON, C T (1992) Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical review B, 46 (15). pp. 9515-9519. ISSN 0163-1829

ELLIS, M K and Hayne, Manus and USHER, A and PLAUT, A S and PLOOG, K (1992) Magneto-optical determination of the electron-solid phase-boundary. Physical review B, 45 (23). pp. 13765-13768. ISSN 0163-1829

Hayne, Manus and ELLIS, M K and PLAUT, A S and USHER, A and PLOOG, K (1992) Temperature dependence of the luminescence from a two-dimensional electron system in the Wigner solid regime. Surface Science, 263 (1-3). pp. 39-43. ISSN 0039-6028

Contribution in Book/Report/Proceedings

Jones, Sam and Hodgson, Peter and Hayne, Manus (2024) GaSb quantum-rings for vertical-cavity surface-emitting lasers emitting at telecommunications and mobile sensing wavelengths. In: Proceedings Volume 12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; 129040J (2024) :. SPIE.

Lane, Dominic and Hodgson, Peter and Potter, Richard and Hayne, Manus (2021) Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) :. IEEE, pp. 1-3. ISBN 9781728181776

Kolosov, Oleg and Dinelli, Franco and Robson, Alexander and Krier, Anthony and Hayne, Manus and Falko, Vladimir and Henini, M. (2015) Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths. In: IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference :. IEEE, FRA, pp. 43-46.

Krier, Anthony and Carrington, Peter and Zhuang, Qiandong and Young, Robert and Hayne, Manus and Lu, Qi and James Asirvatham, Juanita and Wagener, Magnus and Botha, J.R. and Koenraad, P.M. and Smakman, E. P. (2013) Antimonide quantum dot nanostructures for novel photonic device applications. In: The wonder of nanotechnology : quantum optoelectronic devices and applications. SPIE. ISBN 9780819495969

Kolosov, Oleg and Dinelli, Franco and Henini, M. and Krier, Anthony and Hayne, Manus and Pingue, Pasqualnthonio (2012) Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution. In: NSTI-Nanotech 2012 :. CRC PRESS-TAYLOR & FRANCIS GROUP, Santa Clara, USA, pp. 24-26. ISBN 9781466562745

Garcia, Jorge M. and Granados, Daniel and Hayne, Manus and Jantsch, W and Moshchalkov, Victor V. and Schaffler, F and Taboada, Alfonso G. (2007) Observation of PL intensity modulation in self-assembled Quantum Rings (QR) under strong pulsed magnetic fields. In: Physics of Semiconductors, Pts A and B :. American Institute of Physics, pp. 947-948. ISBN 9780735403970

Contribution to Conference

Woodhead, Christopher and Hodgson, Peter and Young, Matthew and Roberts, Jonny and Noori, Yasir and Hayne, Manus and Young, Robert (2015) Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses. In: UK Semiconductor Conference 2015, 2015-07-01 - 2015-07-02, SHU.

Young, Matthew and Roberts, Jonny and Woodhead, Christopher and Noori, Yasir and Sanchez, A. and Smakman, E. P. and Koenraad, P.M. and Hayne, Manus and Young, Robert (2014) Photoluminescence studies of single GaSb quantum rings. In: UK Semiconductors Conference, 2014-07-10.

Roberts, Jonny and Young, Matthew and Noori, Yasir and Smakman, E. P. and Koenraad, P.M. and Hayne, Manus and Young, Robert (2014) A route towards practical quantum communication. In: UK Semiconductors 2014, 2014-07-07.

Roberts, Jonny and Young, Matthew and Noori, Yasir and Smakman, E. P. and Koenraad, P.M. and Hayne, Manus and Young, Robert (2014) Spectroscopy of single GaSb quantum rings : a route towards practical quantum communication. In: QD2014, 2014-05-14.

Thesis

Jones, Samuel and Hayne, Manus and Davies, J. Iwan (2025) A Study of GaSb Quantum Ring Vertical-Cavity Surface-Emitting Devices at Telecommunications Wavelengths. PhD thesis, Lancaster University.

Wilson, Tom and Hayne, Manus (2022) The Design, Optimisation, and Characterisation of GaSb/GaAs Quantum Ring-Based Vertical-Cavity Devices Emitting at Telecoms Wavelengths. PhD thesis, Lancaster University.

Collins, Xiao and Marshall, Andrew and Hayne, Manus (2021) Dilute Nitride GaInNAsSb for Next Generation Optical Communications. PhD thesis, Lancaster University.

Lane, Dominic and Hayne, Manus and Marshall, Andrew (2021) ULTRARAM™ : Design, Modelling, Fabrication and Testing of Ultra-low-power III-V Memory Devices and Arrays. PhD thesis, Lancaster University.

Hanks, Laura and Hayne, Manus (2020) Experimental and theoretical determination of the transport properties of n-AlxGa1-xSb/GaSb. PhD thesis, Lancaster University.

Harrison, Samuel and Hayne, Manus (2016) Exploring and exploiting charge-carrier confinement in semiconductor nanostructures : heterodimensionality in sub-monolayer InAs in GaAs and photoelectrolysis using type-II heterojunctions. PhD thesis, Lancaster University.

Khattak, Shaukat Ali and Hayne, Manus (2015) Exciton confinement in strain-engineered InAs quantum dots in metamorphic In_{x}Ga_{1-x}As. PhD thesis, Lancaster University.

Patent

Lane, Dominic (2020) IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. WO/2020/240186.