GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

Hodgson, Peter and Hayne, Manus and Robson, Alex and Zhuang, Qiandong and Danos, Eleftherios (2016) GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics, 119 (4). ISSN 0021-8979

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Abstract

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/AlxGa1-xAs quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, singleparticle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

Item Type: Journal Article
Journal or Publication Title: Journal of Applied Physics
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 78126
Deposited By: ep_importer_pure
Deposited On: 05 Feb 2016 13:15
Refereed?: Yes
Published?: Published
Last Modified: 20 Oct 2019 00:36
URI: https://eprints.lancs.ac.uk/id/eprint/78126

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