Electron localization by self-assembled GaSb/GaAs quantum dots.

Hayne, Manus and Bersier, Stefan and Maes, Jochen and Moshchalkov, Victor V and Schliwa, Andrei and Muller-Kirsch, Lutz and Kapteyn, Christian and Heitz, Robert and Bimberg, Dieter (2003) Electron localization by self-assembled GaSb/GaAs quantum dots. Applied Physics Letters, 82 (24). pp. 4355-4357. ISSN 1077-3118

[thumbnail of Hayne_APL_82_4355_2003_.pdf]

Preview

PDF
Hayne_APL_82_4355_2003_.pdf - Published Version
Download (52kB)

Abstract

We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes.

Item Type:

Journal Article

Journal or Publication Title:

Applied Physics Letters

Additional Information:

Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (24), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/4355/1

Uncontrolled Keywords:

/dk/atira/pure/subjectarea/asjc/3100/3101

Subjects:

?? physics and astronomy (miscellaneous)qc physics ??

Departments:

Faculty of Science and Technology > Physics

ID Code:

2285

Deposited By:

ep_importer

Deposited On:

04 Apr 2008 08:29

Refereed?:

Yes

Published?:

Published

Last Modified:

18 Nov 2024 01:01

URI:

https://eprints.lancs.ac.uk/id/eprint/2285