Mahajumi, Abu Syed and Carrington, Peter and Kostakis, Ioannis and Missous, Mohammed and Sanchez, Ana and Zhuang, Qiandong and Young, Robert and Hayne, Manus and Krier, Anthony (2013) Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics, 46 (30): 305104. ISSN 0022-3727
Full text not available from this repository.Abstract
The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.