Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

Carrington, Peter J. and Young, Robert J. and Hodgson, Peter D. and Sanchez, Ana M. and Hayne, Manus and Krier, Anthony (2013) Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings. Crystal Growth and Design, 13 (3). pp. 1226-1230. ISSN 1528-7483

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Abstract

We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As-Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 degrees C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 x 10(11) cm(-2). An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 mu m is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.

Item Type:
Journal Article
Journal or Publication Title:
Crystal Growth and Design
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
64738
Deposited By:
Deposited On:
23 May 2013 14:35
Refereed?:
Yes
Published?:
Published
Last Modified:
12 Mar 2020 09:50