Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

Chang, Yu-Chen and Robson, Alexander and Harrison, Samuel and Zhuang, Qiandong and Hayne, Manus (2015) Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. AIP Advances, 5 (6). ISSN 2158-3226

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Official URL: http://dx.doi.org/10.1063/1.4922950

Abstract

We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

Item Type:

Journal Article

Journal or Publication Title:

AIP Advances

Additional Information:

Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Advances, 5 (6), 2015 and may be found at http://scitation.aip.org/content/aip/journal/adva/5/6/10.1063/1.4922950 Date of acceptance is stated in attached document

Departments:

Faculty of Science and Technology > Physics

ID Code:

77567

Deposited By:

ep_importer_pure

Deposited On:

07 Jan 2016 10:50

Refereed?:

Yes

Published?:

Published

Last Modified:

11 Jun 2019 02:56

URI:

https://eprints.lancs.ac.uk/id/eprint/77567