Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

Hayne, Manus and USHER, A and HARRIS, J J and FOXON, C T (1992) Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical review B, 46 (15). pp. 9515-9519. ISSN 0163-1829

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Abstract

Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

Item Type: Journal Article
Journal or Publication Title: Physical review B
Additional Information: © 1992 The American Physical Society
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 54551
Deposited By: ep_importer_pure
Deposited On: 25 May 2012 13:15
Refereed?: Yes
Published?: Published
Last Modified: 17 Feb 2020 01:43
URI: https://eprints.lancs.ac.uk/id/eprint/54551

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