Items where Author is "Patane, A."

Journal Article

Hamer, Matthew and Tóvári, Endre and Mengjian, Zhu and Thompson, Michael Dermot and Mayorov, Alexander and Prance, Jonathan Robert and Lee, Yongjin and Haley, Richard Peter and Kudrynskyi, Zakhar and Patane, A. and Terry, Daniel and Kovalyuk, Zakhar and Ensslin, Klaus and Kretinin, Andrey and Geim, Andre and Gorbachev, Roman (2018) Gate-defined quantum confinement in InSe-based Van der Waals heterostructures. Nano Letters, 18 (6). p. 3950. ISSN 1530-6984

Di Paola, D. M. and Kesaria, Manoj and Makarovsky, Oleg and Velichko, A. V. and Eaves, L and Mori, N. and Krier, Anthony and Patane, A. (2016) Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports, 6: 32039. ISSN 2045-2322

Velichko, A.V. and Kudrynskyi, Z. R. and Di Paola, D. M. and Makarovsky, Oleg and Kesaria, Manoj and Krier, Anthony and Sandall, I. C. and Tan, Chee Hing and Kovalyuk, Z. D. and Patane, A. (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18): 182115. ISSN 0003-6951

Greenaway, M. T. and Vdovin, E. E and Mishchenko, Artem and Makarovsky, O and Patane, A. and Wallbank, John and Cao, Y. and Kretinin, A. V. and Zhu, M. J. and Morozov, S. V. and Falko, Vladimir and Novoselov, K. S. and Geim, A. K. and Fromhold, T. M. and Eaves, L (2015) Resonant tunnelling between the chiral Landau states of twisted graphene lattices. Nature Physics, 11. pp. 1057-1062. ISSN 1745-2473

Birindelli, Simone and Kesaria, Manoj and Giubertoni, D and Pettinari, G and Velichko, A.V. and Zhuang, Qiandong and Krier, Anthony and Patane, A. and Polimeni, A. and Capizzi, Mario (2015) Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology, 30. p. 105030. ISSN 0268-1242

Velichko, A. V. and Patane, A. and Capizzi, M. and Sandall, I. C. and Giubertoni, D. and Makarovsky, O. and Polimeni, A. and Krier, A. and Zhuang, Q. and Tan, C. H. (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106 (2): 022111. ISSN 0003-6951

Kesaria, Manoj and Birindelli, Simone and A.V. Velichko, A.V. and Zhuang, Qiandong and Patane, A. and Capizzi, Mario and Krier, Anthony (2015) In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology, 68. pp. 138-142. ISSN 1350-4495

Mudd, G. W. and Patane, A. and Kudrynskyi, Z. R. and Fay, M. W. and Makarovsky, O. and Eaves, L. and Kovalyuk, Z. D. and Zolyomi, V. and Falko, V. (2014) Quantum confined acceptors and donors in InSe nanosheets. Applied Physics Letters, 105 (22): 221909. ISSN 0003-6951

Krier, Anthony and De La Mare, Martin and Zhuang, Qiandong and Carrington, Peter James and Patane, A. (2013) InAs-based dilute nitride materials and devices for the mid-infrared spectral range. Proceedings of SPIE, 8631: 86311Q. ISSN 0277-786X

De La Mare, Martin and Zhuang, Qiandong and Krier, Anthony and Patane, A. (2012) Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy. Journal of Physics D: Applied Physics, 45 (39). pp. 395103-395105. ISSN 0022-3727

Kozlova, N. V. and Mori, N. and Makarovsky, O. and Eaves, L. and Zhuang, Qiandong and Krier, Anthony and Patane, A. (2012) Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor. Nature Communications, 3: 1097.

Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9): 094009. ISSN 0268-1242

Drachenko, O. and Patane, A. and Kozlova, N. V. and Zhuang, Q. and Krier, A. and Eaves, L. and Helm, M. (2011) Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy. Applied Physics Letters, 98 (16). p. 162109. ISSN 1077-3118

de la Mare, M. and Krier, Anthony and Zhuang, Qiandong and Carrington, Peter and Patane, A. (2011) MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices. Proceedings of SPIE, 7945 (79450L). ISSN 0277-786X

Makarovsky, O. and Feu, W. H. M. and Patane, A. and Eaves, L. and Zhuang, Q. D. and Krier, Anthony and Beanland, R. and Airey, R. (2010) Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy. Applied Physics Letters, 96 (5). 052115. ISSN 1077-3118

de la Mare, M. and Zhuang, Q. and Krier, A. and Patane, A. and Dhar, S. (2009) Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95 (3). 031110. ISSN 1077-3118

Zhuang, Qiandong and Feu, W. H. M. and Patane, A. and Makarovsky, O. and Allison, G. and Eaves, L. and De La Mare, Martin and Krier, Anthony and Hill, G. (2009) Magnetoresistance and electron mobility in dilute nitride InAsN alloys. AIP Conference Proceedings, 1288. ISSN 0094-243X

Patane, A. and Allison, G. and Eaves, L. and Kozlova, N. V. and Zhuang, Q. D. and Krier, A. and Hopkinson, M. and Hill, G. (2008) Electron coherence length and mobility in highly mismatched III-N-V alloys. Applied Physics Letters, 93 (25). p. 252106. ISSN 1077-3118

Contribution in Book/Report/Proceedings

Maes, J. and Henini, M. and Hayne, M. and Patane, A. and Pulizzi, F. and Eaves, L. and Main, P. C. and Moshchalkov, V. V. (2002) InAs/GaAs quantum dot formation studied by magneto-photoluminescence spectroscopy. In: MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy :. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy . Institute of Electrical and Electronics Engineers Inc., USA, pp. 361-362. ISBN 0780375815