De La Mare, Martin and Zhuang, Qiandong and Krier, Anthony and Patane, A. (2012) Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy. Journal of Physics D: Applied Physics, 45 (39). pp. 395103-395105. ISSN 0022-3727
Full text not available from this repository.Abstract
We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2–4 µm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.