Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

De La Mare, Martin and Zhuang, Qiandong and Krier, Anthony and Patane, A. (2012) Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy. Journal of Physics D: Applied Physics, 45 (39). pp. 395103-395105. ISSN 0022-3727

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Abstract

We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2–4 µm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.

Item Type: Journal Article
Journal or Publication Title: Journal of Physics D: Applied Physics
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 62963
Deposited By: ep_importer_pure
Deposited On: 18 Mar 2013 16:36
Refereed?: Yes
Published?: Published
Last Modified: 15 Jan 2020 07:36
URI: https://eprints.lancs.ac.uk/id/eprint/62963

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