Velichko, A.V. and Kudrynskyi, Z. R. and Di Paola, D. M. and Makarovsky, Oleg and Kesaria, Manoj and Krier, Anthony and Sandall, I. C. and Tan, Chee Hing and Kovalyuk, Z. D. and Patane, A. (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18): 182115. ISSN 0003-6951
Full text not available from this repository.Abstract
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.