Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A.V. and Kudrynskyi, Z. R. and Di Paola, D. M. and Makarovsky, Oleg and Kesaria, Manoj and Krier, Anthony and Sandall, I. C. and Tan, Chee Hing and Kovalyuk, Z. D. and Patane, A. (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). ISSN 0003-6951

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Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 86483
Deposited By: ep_importer_pure
Deposited On: 30 May 2017 10:20
Refereed?: Yes
Published?: Published
Last Modified: 15 Oct 2019 04:15
URI: https://eprints.lancs.ac.uk/id/eprint/86483

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