Items where Author is "de la Mare, M."

Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9): 094009. ISSN 0268-1242

Das, S. K. and Das, T. D. and Dhar, S. and de la Mare, M. and Krier, A. (2012) Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared Physics and Technology, 55 (1). pp. 156-160. ISSN 1350-4495

de la Mare, M. and Das, S. C. and Das, T. D. and Dhar, S. and Krier, A. (2011) N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy. Journal of Physics D: Applied Physics, 44 (31): 315102. -. ISSN 0022-3727

de la Mare, M. and Krier, Anthony and Zhuang, Qiandong and Carrington, Peter and Patane, A. (2011) MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices. Proceedings of SPIE, 7945 (79450L). ISSN 0277-786X

Carrington, Peter and de la Mare, M. and Cheetham, K. J. and Zhuang, Qiandong and Krier, Anthony (2011) Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics, 2011 (n/a): 145012. ISSN 1687-563X

Ibanez, J. and Oliva, R. and de la Mare, M. and Schmidbauer, M. and Hernandez, S. and Pellegrino, P. and Scurr, D. J. and Cusco, R. and Artus, L. and Shafi, M. and Mari, R. H. and Henini, M. and Zhuang, Q. and Godenir, A. M. R. and Krier, A. (2010) Structural and optical properties of dilute InAsN grown by molecular beam epitaxy. Journal of Applied Physics, 108 (10). p. 103504. ISSN 1089-7550

de la Mare, M. and Carrington, P. J. and Wheatley, R. and Zhuang, Q. and Beanland, R. and Sanchez, A. M. and Krier, A. (2010) Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43 (34). p. 345103. ISSN 0022-3727

de la Mare, M. and Zhuang, Q. and Krier, A. and Patane, A. and Dhar, S. (2009) Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range. Applied Physics Letters, 95 (3). 031110. ISSN 1077-3118

Dhar, S. and Das, T. D. and de la Mare, M. and Krier, A. (2008) Properties of dilute InAsN layers grown by liquid phase epitaxy. Applied Physics Letters, 93 (7). 071905. ISSN 1077-3118