Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Carrington, Peter and de la Mare, M. and Cheetham, K. J. and Zhuang, Qiandong and Krier, Anthony (2011) Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics, 2011 (n/a). ISSN 1687-563X

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Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

Item Type: Journal Article
Journal or Publication Title: Advances in OptoElectronics
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Departments: Faculty of Science and Technology > Physics
ID Code: 53106
Deposited By: ep_importer_pure
Deposited On: 09 Mar 2012 02:54
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 07:43
URI: https://eprints.lancs.ac.uk/id/eprint/53106

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