Carrington, Peter and de la Mare, M. and Cheetham, K. J. and Zhuang, Qiandong and Krier, Anthony (2011) Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics, 2011 (n/a): 145012. ISSN 1687-563X
Full text not available from this repository.Abstract
Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.