Items where Author is "Liu, Huiyun"

Journal Article

Wang, Yangqian and Jia, Hui and Park, Jae-Seong and Zeng, Haotian and Marko, Igor P. and Bentley, Matthew and Hajraoui, Khalil El and Liu, Shangfeng and Yang, Bo and Dear, Calum and Bai, Mengxun and Deng, Huiwen and Chen, Chong and Yuan, Jiajing and Li, Jun and Liu, Kongming and Duffy, Dominic A. and Yan, Zhao and Wang, Zihao and Sweeney, Stephen J. and Zhuang, Qiandong and Ramasse, Quentin M. and Chen, Siming and Tang, Mingchu and Li, Qiang and Seeds, Alwyn and Liu, Huiyun (2026) Mid-infrared InAs/InP quantum-dot lasers. Light: Science and Applications, 15 (1): 64. ISSN 2095-5545

Orchard, Jonathan and Woodhead, Christopher and Wu, Jiang and Tang, Mingchu and Beanland, R and Noori, Yasir and Liu, Huiyun and Mowbray, David and Young, Robert James (2017) Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics, 4 (7). pp. 1740-1746. ISSN 2330-4022

Craig, Adam and Carrington, Peter James and Liu, Huiyun and Marshall, Andrew Robert Julian (2016) Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy. Journal of Crystal Growth, 435. pp. 56-61. ISSN 0022-0248

Contribution in Book/Report/Proceedings

Orchard, Jonathan and Woodhead, Christopher and Shutts, Samuel and Wu, Jiang and Sobiesierski, Angela and Young, Robert James and Beanland, R and Liu, Huiyun and Smowton, Peter and Mowbray, David (2016) Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. In: Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII :. Proceedings of SPIE, 9758 . SPIE. ISBN 9781628419931

Contribution to Conference

Kolosov, Oleg and Mucientes, Marta and Forcieri, Leonardo and Jurczak, Pamela and Tang, M and Lulla Ramrakhiyani, Kunal and Gong, Y. and Jarvis, Samuel and Liu, Huiyun and Wang, Tao (2019) Imaging 3D nanostructure of III-V on Si via cross-section SPM: quantum wells and nanowires - defects, polarity, local charges. In: E-MRS Fall Meeting 2019, 2019-09-16 - 2019-09-19.