Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Craig, Adam and Carrington, Peter James and Liu, Huiyun and Marshall, Andrew Robert Julian (2016) Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy. Journal of Crystal Growth, 435. pp. 56-61. ISSN 0022-0248

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Abstract

GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.

Item Type: Journal Article
Journal or Publication Title: Journal of Crystal Growth
Additional Information: This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, 435, 2016 DOI: 10.1016/j.jcrysgro.2015.11.025
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 77343
Deposited By: ep_importer_pure
Deposited On: 22 Dec 2015 13:16
Refereed?: Yes
Published?: Published
Last Modified: 18 Oct 2019 00:30
URI: https://eprints.lancs.ac.uk/id/eprint/77343

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