Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications

Orchard, Jonathan and Woodhead, Christopher and Shutts, Samuel and Wu, Jiang and Sobiesierski, Angela and Young, Robert James and Beanland, R and Liu, Huiyun and Smowton, Peter and Mowbray, David (2016) Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. In: Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. Proceedings of SPIE, 9758 . SPIE. ISBN 9781628419931

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Abstract

Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.

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Contribution in Book/Report/Proceedings
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Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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ID Code:
78978
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Deposited On:
12 Apr 2016 08:52
Refereed?:
Yes
Published?:
Published
Last Modified:
12 Aug 2020 12:04