Orchard, Jonathan and Woodhead, Christopher and Wu, Jiang and Tang, Mingchu and Beanland, R and Noori, Yasir and Liu, Huiyun and Mowbray, David and Young, Robert James (2017) Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics, 4 (7). pp. 1740-1746. ISSN 2330-4022
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Abstract
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.