Items where Author is "Krier, A"

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Number of items: 14.

Nohavica, D and Krier, A (2004) Structural modifications of InAs based materials for mid-infrared optoelectronic devices. In: ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems :. IEEE, Smolenice, pp. 203-206. ISBN 0-7803-8535-7

Moiseev, K D and Mikhailova, M P and Yakovlev, Y P and Krier, A (2003) Interface luminescence and lasing at a type II single broken-gap heterojunction. In: 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY :. SPIE-INT SOC OPTICAL ENGINEERING, ST PETERSBURG, pp. 340-342. ISBN 0-8194-4824-9

Wright, D A and Krier, A and Sherstnev, V V and Monakhov, A (2003) Mid-infrared whispering gallery lasers. In: 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 :. IEEE, TUCSON, p. 280. ISBN 0-7803-7888-1

Chakrabarti, P and Krier, A and Huang, X L and Fenge, P and Lal, R K (2003) Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. In: PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II :. IEEE, Iguazu Falls, pp. 87-92. ISBN 0-7803-7824-5

Krier, A and Huang, X L (2002) Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In: Physics and Simulation of Optoelectronic Devices X :. SPIE-INT SOC OPTICAL ENGINEERING, SAN JOSE, pp. 70-78. ISBN 0-8194-4385-9

Moiseev, K D and Mikhailova, M P and Yakovlev, Y P and Krier, A (2001) Mid-infrared lasers operating on a single quantum well at the type II heterointerface. In: LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS :. IEEE, SAN DIEGO, pp. 534-535. ISBN 0-7803-7105-4

Krier, A and Labadi, Z and Hammiche, A (1999) InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32 (20). pp. 2587-2589. ISSN 0022-3727

Gao, H H and Krier, A and Sherstnev, V and Yakovlev, Y (1999) InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature. Journal of Physics D: Applied Physics, 32 (15). pp. 1768-1772. ISSN 0022-3727

Krier, A and Gao, H H and Sherstnev, V V (1999) Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering. Journal of Applied Physics, 85 (12). pp. 8419-8422. ISSN 0021-8979

Iraqi, A and Clark, D and Jones, Robert and Krier, A (1999) Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes. Synthetic Metals, 102 (1-3). pp. 1220-1221. ISSN 0379-6779

Gao, H H and Krier, A and Sherstnev, V V (1999) High quality InAs grown by liquid phase epitaxy using gadolinium gettering. Semiconductor Science and Technology, 14 (5). pp. 441-445. ISSN 0268-1242

Jones, Robert and Krier, A and Davidson, K and Schmit, J P N and Zawadzka, J (1999) Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias. Thin Solid Films, 340 (1-2). pp. 221-229. ISSN 0040-6090

Krier, A and Chubb, D and Krier, S E and Hopkinson, M and Hill, G (1998) Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. IEE Proceedings - Optoelectronics, 145 (5). pp. 292-296. ISSN 1350-2433

Krier, A and Labadi, Z and Richardson, J (1998) Rapid slider LPE growth of InAs quantum wells. IEE Proceedings - Optoelectronics, 145 (5). pp. 297-301. ISSN 1350-2433

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