InAsSbP quantum dots grown by liquid phase epitaxy

Krier, A and Labadi, Z and Hammiche, A (1999) InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32 (20). pp. 2587-2589. ISSN 0022-3727

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Abstract

We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.

Item Type: Journal Article
Journal or Publication Title: Journal of Physics D: Applied Physics
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
Faculty of Science and Technology > Lancaster Environment Centre
ID Code: 56602
Deposited By: ep_importer_pure
Deposited On: 09 Aug 2012 11:58
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 08:02
URI: https://eprints.lancs.ac.uk/id/eprint/56602

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