Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

Krier, A and Huang, X L (2002) Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In: Physics and Simulation of Optoelectronic Devices X :. SPIE-INT SOC OPTICAL ENGINEERING, SAN JOSE, pp. 70-78. ISBN 0-8194-4385-9

Abstract

Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.