Structural modifications of InAs based materials for mid-infrared optoelectronic devices

Nohavica, D and Krier, A (2004) Structural modifications of InAs based materials for mid-infrared optoelectronic devices. In: ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems :. IEEE, Smolenice, pp. 203-206. ISBN 0-7803-8535-7

Abstract

Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.