Items where Author is "Carrington, Peter"
Yeap, Gik Hong and Rybchenko, Sergey and Itskevich, Igor and Haywood, Stephanie and Carrington, Peter and Krier, Anthony (2023) Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications. Defect and Diffusion Forum, 425. pp. 3-8. ISSN 1662-9507
Altayar, Abdullah and Al-Saymari, Furat and Repiso Menendez, Eva and Hanks, Laura and Craig, Adam and Bentley, Matthew and Delli, Evangelia and Carrington, Peter and Krier, Anthony and Marshall, Andrew (2022) Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers. Journal of Crystal Growth, 586: 126627. ISSN 0022-0248
Hodgson, Peter and Lane, Dominic and Carrington, Peter and Delli, Evangelia and Beanland, Richard and Hayne, Manus (2022) ULTRARAM : A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8 (4): 2101103. ISSN 2199-160X
Bentley, Matthew and Carrington, Peter and Krier, Anthony (2021) 1.55μm Efficient Temperature Insensitive GaSb-based Lasers for Telecoms Applications. PhD thesis, Lancaster University.
Delli, Evangelia and Hodgson, Peter and Bentley, Matthew and Repiso Menendez, Eva and Craig, Adam and Lu, Qi and Beanland, Richard and Marshall, Andrew and Krier, Anthony and Carrington, Peter (2020) Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon. Applied Physics Letters, 117 (13): 131103. ISSN 0003-6951
Carrington, Peter and Delli, Evangelia and Letka, Veronica and Bentley, Matthew and Hodgson, Peter and Repiso Menendez, Eva and Hayton, Jonathan and Craig, Adam and Lu, Qi and Beanland, Richard and Krier, Anthony and Marshall, Andrew (2020) Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon. In: Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X :. SPIE--The International Society for Optical Engineering.
Al-Saymari, Furat and Craig, Adam and Lu, Qi and Marshall, Andrew and Carrington, Peter and Krier, Anthony (2020) Mid-infrared resonant cavity light emitting diodes operating at 4.5 μm. Optics Express, 28 (16). pp. 23338-23353. ISSN 1094-4087
Delli, Evangelia and Carrington, Peter (2020) Monolithic integration of mid-infrared III-V semiconductor materials and devices onto silicon. PhD thesis, Lancaster University.
Khan, Atif and Repiso Menendez, Eva and Herrera, M and Carrington, Peter and De La Mata, Maria and Pizarro, J and Krier, Anthony and Molina, Sergio (2019) Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices. Nanotechnology, 31 (10): 105702. ISSN 0957-4484
Krier, Anthony and Repiso Menendez, Eva and Al-Saymari, Furat and Carrington, Peter and Marshall, Andrew and Lu, Qi and Krier, Susan and Lulla Ramrakhiyani, Kunal and Steer, Matthew and MacGregor, Calum and Broderick, Christopher and Arkani, Reza and O'Reilly, Eoin and Sorel, Marc and Molina, Sergio and de la Mata, Maria (2019) Mid-infrared Light Emitting Diodes. In: Mid-infrared Optoelectronics Materials, Devices, and Applications :. Elsevier. ISBN 9780081027097
Repiso Menendez, Eva and Broderick, Christopher and de la Mata, Maria and Arkani, Reza and Lu, Qi and Marshall, Andrew and Molina, Sergio and O'Reilly, Eoin and Carrington, Peter and Krier, Anthony (2019) Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range. Journal of Physics D: Applied Physics, 52: 465102. ISSN 0022-3727
Montesdeoca Cardenes, Denise and Carrington, Peter and Krier, Anthony and Wagener, Magnus C. (2019) Type-II GaSb/GaAs Quantum Ring Intermediate Band Solar Cell. PhD thesis, Lancaster University.
Lu, Qi and Zhou, Xinxin and Krysa, Andrey and Marshall, Andrew and Carrington, Peter and Tan, Chee-Hing and Krier, Anthony (2018) InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C. Solar Energy Materials and Solar Cells, 179. pp. 334-338. ISSN 0927-0248
James Asirvatham, Juanita and Fujita, Hiromi and Carrington, Peter and Marshall, Andrew and Krier, Anthony (2014) Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation. IET Optoelectronics, 8 (2). pp. 76-80. ISSN 1751-8768
Fujita, Hiromi and James Asirvatham, Juanita and Carrington, Peter and Marshall, Andrew and Krier, Anthony and Wagener, Magnus C. and Botha, Johannes Reinhardt (2014) Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells. Semiconductor Science and Technology, 29 (3): 035014. ISSN 0268-1242
Krier, Anthony and Carrington, Peter and Zhuang, Qiandong and Young, Robert and Hayne, Manus and Lu, Qi and James Asirvatham, Juanita and Wagener, Magnus and Botha, J.R. and Koenraad, P.M. and Smakman, E. P. (2013) Antimonide quantum dot nanostructures for novel photonic device applications. In: The wonder of nanotechnology : quantum optoelectronic devices and applications. SPIE. ISBN 9780819495969
Mahajumi, Abu Syed and Carrington, Peter and Kostakis, Ioannis and Missous, Mohammed and Sanchez, Ana and Zhuang, Qiandong and Young, Robert and Hayne, Manus and Krier, Anthony (2013) Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics, 46 (30): 305104. ISSN 0022-3727
de la Mare, M. and Krier, Anthony and Zhuang, Qiandong and Carrington, Peter and Patane, A. (2011) MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices. Proceedings of SPIE, 7945 (79450L). ISSN 0277-786X
Carrington, Peter and de la Mare, M. and Cheetham, K. J. and Zhuang, Qiandong and Krier, Anthony (2011) Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics, 2011 (n/a): 145012. ISSN 1687-563X
Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900: 69000I. ISSN 0277-786X
Krier, A. and Yin, M. and Smirnov, V. and Batty, Peter James and Carrington, Peter and Solovev, V. and Sherstnev, V. (2008) The development of room temperature LEDs and lasers for the mid-infrared spectral range. physica status solidi (a), 205 (1). pp. 129-143. ISSN 0031-8965
Solov'ev, V. A. and Carrington, Peter and Zhuang, Qian and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK :. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 129-131. ISBN 978-1-4020-8424-9
Yin, M. and Krier, A. and Jones, Robert and Carrington, Peter (2007) Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. . Applied Physics Letters, 91 (10): 101104. ISSN 1077-3118