Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

Altayar, Abdullah and Al-Saymari, Furat and Repiso Menendez, Eva and Hanks, Laura and Craig, Adam and Bentley, Matthew and Delli, Evangelia and Carrington, Peter and Krier, Anthony and Marshall, Andrew (2022) Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers. Journal of Crystal Growth, 586: 126627. ISSN 0022-0248

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Abstract

Heteroepitaxy of mid-infrared Sb-based III-V semiconductor devices on highly mismatched wafers such as GaAs and silicon are a promising route towards high-density integration benefiting from the mature fabrication technology of these substrates. This work reports on the electrical performance of heteroepitaxially grown midinfrared InAs0.915Sb0.085/Al0.12In0.88As multi-quantum wells light emitting diodes on GaAs and offcut Si substrates using molecular beam epitaxy. Both devices exhibited a strong room temperature electroluminescence signal peaking at around 3.4 µm. Analysis of the output power results obtained from both devices revealed that the Si-based LED exhibited higher external quantum efficiency despite the higher defect density which is attributed to the superior thermal properties of the Si wafer.