Items where Author is "Thompson, Michael Dermot"

Journal Article

Hamer, Matthew and Tóvári, Endre and Mengjian, Zhu and Thompson, Michael Dermot and Mayorov, Alexander and Prance, Jonathan Robert and Lee, Yongjin and Haley, Richard Peter and Kudrynskyi, Zakhar and Patane, A. and Terry, Daniel and Kovalyuk, Zakhar and Ensslin, Klaus and Kretinin, Andrey and Geim, Andre and Gorbachev, Roman (2018) Gate-defined quantum confinement in InSe-based Van der Waals heterostructures. Nano Letters, 18 (6). p. 3950. ISSN 1530-6984

Alhodaib, Aiyeshah and Noori, Yasir and Carrington, Peter James and Sanchez, Ana and Thompson, Michael Dermot and Young, Robert James and Krier, Anthony and Marshall, Andrew Robert Julian (2018) Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires. Nano Letters, 18 (1). pp. 235-240. ISSN 1530-6984

Thompson, Michael Dermot and Ben Shalom, Moshe and Geim, Andre and Matthews, Anthony and White, Jeremy and Melhem, Ziad and Pashkin, Yuri and Haley, Richard Peter and Prance, Jonathan Robert (2017) Graphene-based tunable SQUIDs. Applied Physics Letters, 110 (16): 162602. ISSN 0003-6951

Zhu, M. J. and Kretinin, A. V. and Thompson, Michael Dermot and Bandurin, D. A. and Hu, S. and Yu, G. L. and Birkbeck, J. and Mishchenko, Artem and Vera-Marun, I. J. and Watanabe, K. and Taniguchi, T. and Polini, M. and Prance, Jonathan Robert and Novoselov, K. S. and Geim, A. K. and Ben Shalom, M. (2017) Edge currents shunt the insulating bulk in gapped graphene. Nature Communications, 8: 14552. ISSN 2041-1723

Thompson, Michael Dermot and Alhodaib, Aiyeshah and Craig, Adam P. and Robson, Alexander James and Aziz, Atif and Krier, Anthony and Svensson, Johannes and Wernersson, Lars-erik and Sanchez, Ana M. and Marshall, Andrew R. J. (2016) Low leakage-current InAsSb nanowire photodetectors on silicon. Nano Letters, 16 (1). pp. 182-187. ISSN 1530-6984

Hayton, Jonathan Paul and Marshall, Andrew Robert Julian and Thompson, Michael Dermot and Krier, Anthony (2015) Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer. AIMS Materials Science, 2 (2). pp. 86-96. ISSN 2372-0484