Low leakage-current InAsSb nanowire photodetectors on silicon

Thompson, Michael Dermot and Alhodaib, Aiyeshah and Craig, Adam P. and Robson, Alexander James and Aziz, Atif and Krier, Anthony and Svensson, Johannes and Wernersson, Lars-erik and Sanchez, Ana M. and Marshall, Andrew R. J. (2016) Low leakage-current InAsSb nanowire photodetectors on silicon. Nano Letters, 16 (1). pp. 182-187. ISSN 1530-6984

[img]
Preview
PDF (InAsSbNanowires)
InAsSbNanowires.pdf - Accepted Version
Available under License Creative Commons Attribution.

Download (3MB)

Abstract

Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.

Item Type: Journal Article
Journal or Publication Title: Nano Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 77453
Deposited By: ep_importer_pure
Deposited On: 05 Jan 2016 10:04
Refereed?: Yes
Published?: Published
Last Modified: 15 Oct 2019 03:24
URI: https://eprints.lancs.ac.uk/id/eprint/77453

Actions (login required)

View Item View Item