Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

Hayton, Jonathan Paul and Marshall, Andrew Robert Julian and Thompson, Michael Dermot and Krier, Anthony (2015) Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer. AIMS Materials Science, 2 (2). pp. 86-96. ISSN 2372-0484

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Abstract

GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.

Item Type:
Journal Article
Journal or Publication Title:
AIMS Materials Science
Subjects:
ID Code:
81596
Deposited By:
Deposited On:
20 Sep 2016 08:18
Refereed?:
Yes
Published?:
Published
Last Modified:
06 Aug 2020 03:49