InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

Craig, Adam and Marshall, Andrew and Letka, Veronica and Carmichael, Mark and Golding, Terry (2021) InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared. Applied Physics Letters. ISSN 0003-6951 (In Press)

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Abstract

III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2021 American Institute of Physics. The following article appeared in Applied Physics Letters, ?, 2021 and may be found at http://dx.doi.org/10.1063/5.0051049 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
156382
Deposited By:
Deposited On:
22 Jun 2021 09:20
Refereed?:
Yes
Published?:
In Press
Last Modified:
03 Aug 2021 05:28