InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

Craig, Adam and Marshall, Andrew and Letka, Veronica and Carmichael, Mark and Golding, Terry (2021) InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared. Applied Physics Letters. ISSN 0003-6951 (In Press)

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III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.

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Journal Article
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Applied Physics Letters
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Copyright 2021 American Institute of Physics. The following article appeared in Applied Physics Letters, ?, 2021 and may be found at This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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22 Jun 2021 09:20
In Press
Last Modified:
03 Aug 2021 05:28